[1] N. Li*, C. Mackin, A. Chen, K. Brew, T. Philip, A. Simon, I. Saraf, J. Han, S. Sarwat, G.W. Burr, M. Rasch, A. Sebastian, V. Narayanan, N. Saulnier, “Optimization of Projected Phase Change Memory for Analog In-Memory Computing Inference,” Advanced Electronic Materials, 2201190, 2023
[2] N. Li*, H. Tsai, V. Narayanan, Malte Rasch* “Impact of Analog Memory Device Failure on In-Memory Computing Inference Accuracy,” APL Machine Learning, 016104, 2023
[3] N. Li*, K. Han, W. Spratt, S. Bedell, J. Ren, O. Gunawan, J. Ott, M. Hopstaken, C. Cabril, Jr., F. Libsch, C. Subramaniam, G. Shaidi, D. Sadana, “Dust-Sized High-Power-Density Photovoltaic Cells on Si and SOI Substrates for Wafer-Level-Packaged Small Edge Computers,” Advanced Materials 32, 2004573, 2020
[4] N. Li*, K. Han, W. Spratt, S. Bedell, J. Ott, M. Hopstaken, F. Libsch, Q. Li, D. Sadana, “Ultra-Low-Power Sub-Photon-Voltage High-Efficiency Light-Emitting Diodes,” Nature Photonics 13, 588, 2019
[5] N. Li*, S. Bedell, H. Hu, S.-J. Han, X. H. Liu, K. Saenger, D. Sadana, “Single Crystal Flexible Electronics Enabled by 3D Spalling,” Advanced Materials 29, 1606638, 2017
[6] N. Li*, S. Oida, G.S. Tulevski, S. Han, J.B. Hannon, D.K. Sadana, T.C. Chen, “Efficient and Bright Organic Light-Emitting Diodes on Single-Layer Graphene Electrode," Nature Communications 4, 2294, 2013
[7] N. Li*, E. S. Harmon, J. Hyland, D. B. Salzman, T. P. Ma, Y. Xuan, P. D. Ye “Properties of a Simple InAs Field-Effect-Transistor with ALD Al2O3 Gate Dielectric,” Applied Physics Letters 92, 143507, 2008
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[9] N. Li, X. Li, S. Demiguel, X. Zheng, J. C. Campbell, D. A. Tulchinsky, K. J. Williams, T.D. Isshiki, G.S. Kinsey, R. Sudharsansan, “High-Saturation-Current Charge-Compensated InGaAs/InP Uni-Traveling-Carrier Photodiode,” IEEE Photonics Technology Letters 16, 864, 2004
[10] N. Li, R. Sidhu, X. Li, F. Ma, X. Zheng, S. Wang, G. Karve, S. Demiguel, A. L. Holmes, Jr., and J. C. Campbell, “InGaAs/InAlAs Avalanche Photodiode with Undepleted Absorber,” Applied Physics Letters 82, 2175, 2003
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